Field Emission Scanning Electron Microscopy (FE-SEM)
Starts at P7,500/sample (P6,000 student rate)
The Field Emission Scanning Electron Microscopy (FE-SEM) imaging technique allows visualization of very small features, around several nanometers in dimension. It uses a focused beam of electrons which will scan the surface of the sample. The interaction of the electron beam with the sample produces secondary electrons which give information on the surface topography. In some cases, the backscattered electrons are used to determine differences in the sample composition.
- High-resolution and high-magnification imaging
- Elemental composition of the sample as a spectrum, line profile, elemental map
- Site-specific analysis, deposition, and etching of materials
- ~20nm resolution
- 30kV system
- Up to 1Mx magnification
- Capable of backscattered electron imaging
- With ETD and TLD detector systems
Morphological characterization including measurements, layer characterization, elemental composition. Ideal for failure analysis and materials characterization.
EDX point analysis
EDX line anaysis
Lamella preparation (STEM imaging)
Max 2in(W) x 2in(L) x 1in(T)